spn1423 description applications the spn1423 is the n- channel logic enhancement mode power field effect transistors are produced using h igh cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low volta ge application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in- line power loss are needed in a very small outline sur face mount package. power management in note book portable equipment battery powered system dc/dc converter load switch dsc lcd display inverter features pin configuration ( sot-323 ; sc-70 ) part marking 20v/2.8a,r ds(on) = 90m ? @v gs =4.5v 20v/2.2a,r ds(on) = 100m ? @v gs =2.5v super high density cell design for extremely low r ds (on) exceptional on-resistance and maximum dc current capability sot-323 ( scC70 ) package design product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking spn1423s32rg sot-323 23yw SPN1423S32RGB sot-323 23yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) spn1423s32rg : tape reel ; pb C free SPN1423S32RGB : tape reel ; pb C free ; halogen C f ree absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 20 v gate Csource voltage v gss 12 v t a =25 2.8 continuous drain current(t j =150 ) t a =70 i d 2.2 a pulsed drain current i dm 10 a continuous source current(diode conduction) i s 1.6 a t a =25 1.25 power dissipation t a =70 p d 0.8 w operating junction temperature t j 150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 100 /w spn1423 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 20 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 0.45 1.2 v gate leakage current i gss v ds =0v,v gs =12v 100 na v ds =20v,v gs =0v 1 zero gate voltage drain current i dss v ds =20v,v gs =0v t j =55 10 ua v ds R 5v,v gs =4.5v 5 on-state drain current i d(on) v ds R 5v,v gs =2.5v 4 a v gs =4.5v,i d =2.8a 0.055 0.090 drain-source on-resistance r ds(on) v gs =2.5v,i d =2.2a 0.075 0.100 ? forward transconductance gfs v ds =5v,i d =2.8a 10 s diode forward voltage v sd i s =1.6a,v gs =0v 0.85 1.2 v dynamic total gate charge q g 5.4 10 gate-source charge q gs 0.65 gate-drain charge q gd v ds =10v,v gs =4.5v i d 2.8a 1.4 nc input capacitance c iss 340 output capacitance c oss 115 reverse transfer capacitance c rss v ds =10v,v gs =0v f=1mhz 33 pf t d(on) 12 25 turn-on time t r 36 60 t d(off) 34 60 turn-off time t f v dd =10v,r l =5.5 ? i d 2.8a,v gen =4.5v r g =6 ? 10 25 ns spn1423 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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